BYT60P-1000 byt261piv-1000 october 1999 - ed: 4b fast recovery rectifier diodes ? dual or high single voltage rectifier devices suited for switch mode power supplies and other power converters. these devices are packaged in isotop or in sod93. description very low reverse recovery time very low switching losses low noise turn-off switching insulated package: isotop insulation voltage: 2500 v rms capacitance = 45 pf inductance < 5 nh features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 1000 v i frm repetitive peak forward current tp=5 m s f=1khz 1000 a i f(rms) rms forward current isotop 140 a sod93 100 i f(av) average forward current d = 0.5 tc = 50 c isotop 60 a tc = 60c sod93 60 i fsm surge non repetitive forward current tp = 10 ms sinusoidal 400 a t stg storage temperature range - 40 to + 150 c tj maximum operating junction temperature 150 c absolute ratings (limiting values, per diode) i f(av) 2 x 60 a v rrm 1000 v v f (max) 1.8 v trr (max) 70 ns major product characteristics isotop tm (plastic) k2 a2 a1 k1 byt261piv-1000 tm: isotop is a registered trademark of stmicroelectronics. k a sod93 (plastic) 1/7
symbol parameter test conditions min. typ. max. unit v f * forward voltage drop tj = 25 ci f = 60 a 1.9 v tj = 100 c 1.8 i r ** reverse leakage current tj = 25 cv r = v rrm 100 m a tj = 100 c 6ma pulse test : * tp = 380 m s, d < 2% ** tp = 5 ms, d < 2% static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case isotop per diode total 0.8 0.45 c/w sod93 total 0.7 r th(c) coupling 0.1 c/w when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode) x r th(j-c) (per diode) + p(diode 2) x r th(c) thermal resistances to evaluate the conduction losses use the following equation: p = 1.47 x i f(av) + 0.005 i f 2 (rms) symbol test conditions min. typ. max. unit t rr tj = 25c i f = 1a v r = 30v di f /dt = - 15a/ m s 170 ns i f = 0.5a i r = 1a i rr = 0.25a 70 recovery characteristics (per diode) symbol parameter test conditions min. typ. max. unit t irm maximum reverse recovery time di f /dt = - 240 a/ m sv cc = 200 v i f = 60 a l p 0.05 m h tj = 100c (see fig. 13) 200 ns di f /dt = - 480 a/ m s 120 i rm maximum reverse recovery current di f /dt = - 240 a/ m s 40 a di f /dt = - 480 a/ m s 44 c = v rp v cc turn-off overvoltage coefficient tj = 100c v cc = 200v i f = i f(av) di f /dt = - 60a/ m s l p = 2.5 m h (see fig. 14) 3.3 4.5 / turn-off switching characteristics BYT60P-1000 / byt261piv-1000 2/7
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 im(a) p=100w p=20w p=70w p=40w t d =tp/t tp d fig. 2-1: peak current versus form factor (per diode, isotop). 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 tamb(c) if(av)(a) rth(j-a)=2.5c/w rth(j-a)=rth(j-c) isotop sod93 t d =tp/t tp fig. 3: average forward current versus ambient temperature ( d =0.5, per diode for isotop). 0 10203040506070 0 10 20 30 40 50 60 70 80 90 100 110 120 130 if(av) (a) pf(av)(w) t d =tp/t tp d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1-1: average forward power dissipation versus average forward current (per diode, isotop). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 im(a) p=100w p=20w p=70w p=40w t d =tp/t tp d fig. 2-2: peak current versus form factor (sod93). 0 10203040506070 0 10 20 30 40 50 60 70 80 90 100 110 120 130 if(av) (a) pf(av)(w) t d =tp/t tp d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1-2: average forward power dissipation versus average forward current (sod93). BYT60P-1000 / byt261piv-1000 3/7
1 10 100 200 0 20 40 60 80 100 vr(v) c(pf) f=1mhz tj=25c fig. 7: junction capacitance versus reverse voltage applied (typical values, per diode for isotop). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 500 vfm(v) ifm(a) typical values tj=100c tj=25c tj=100c fig. 6: forward voltage drop versus forward current (maximum values, per diode for isotop). 1e-3 1e-2 1e-1 1e+0 0.1 0.2 0.5 1.0 tp(s) k=[zth(j-c)/rth(j-c)] t d =tp/t tp single pulse d = 0.1 d = 0.2 d = 0.5 fig. 5-1: relative variation of thermal impedance junction to case versus pulse duration (per diode, isotop). 1e-3 1e-2 1e-1 1e+0 0 50 100 150 200 250 300 350 400 t(s) im(a) tc=60c tc=25c i m t d =0.5 fig. 4-1: non repetitive surge peak forward current versus overload duration (sod93). 1e-3 1e-2 1e-1 1e+0 0 50 100 150 200 250 300 350 400 tc=50c tc=25c t(s) im(a) i m t d =0.5 fig. 4-2: non repetitive surge peak forward current versus overload duration (per diode, isotop). 1e-3 1e-2 1e-1 1e+0 0.1 0.2 0.5 1.0 tp(s) k=[zth(j-c)/rth(j-c)] t d =tp/t tp single pulse d = 0.1 d = 0.2 d = 0.5 fig. 5-2: relative variation of thermal impedance junction to case versus pulse duration (sod93). BYT60P-1000 / byt261piv-1000 4/7
0 100 200 300 400 500 0.00 0.25 0.50 0.75 1.00 1.25 1.50 tfr(s) if=if(av) 90% confidence tj=100c dif/dt(a/s) fig. 11: forward recovery time versus di f /dt (per diode for isotop). 0 25 50 75 100 125 150 0.25 0.50 0.75 1.00 1.25 1.50 tj(c) qrr;irm[tj] / qrr;irm[tj=100c] irm qrr fig. 12: dynamic parameters versus junction temperature. 0 100 200 300 400 500 0 5 10 15 20 25 30 35 40 45 vfp(v) if=if(av) 90% confidence tj=100c dif/dt(a/s) fig. 10: transient peak forward voltage versus di f /dt (per diode for isotop). 10 20 50 100 200 500 0 10 20 30 40 50 60 70 80 irm(a) if=if(av) 90% confidence tj=100c dif/dt(a/s) fig. 9: recovery current versus di f /dt (per diode for isotop). 10 20 50 100 200 500 0 2 4 6 8 10 dif/dt(a/s) qrr(c) if=if(av) 90% confidence tj=100c fig. 8: recovery charges versus di f /dt (per diode for isotop). BYT60P-1000 / byt261piv-1000 5/7
lc dut vcc if vf irm vcc tirm dif/dt fig. 13: turn-off switching characteristics (without serie inductance). lc dut vcc lp if vf vrp vcc dif/dt fig. 14: turn-off switching characteristics (with serie inductance). package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 BYT60P-1000 / byt261piv-1000 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering type marking package weight base qty delivery mode BYT60P-1000 BYT60P-1000 sod93 3.79 g. 30 tube byt261piv-1000 byt261piv-1000 isotop 28 g. (without screws) 10 tube cooling method: by conduction (c) recommended torque value (isotop): 1.3 n.m (max 1.5 n.m) for the 6 x m4 screws. (2 x m4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw ver- sion).the screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. recommended torque value (sod93): 0.8 n.m. maximum torque value (sod93): 1.0 n.m. epoxy meets ul94,v0 package mechanical data sod93 plastic ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.70 4.90 0.185 0.193 c 1.17 1.37 0.046 0.054 d 2.50 0.098 d1 1.27 0.050 e 0.50 0.78 0.020 0.031 f 1.10 1.30 0.043 0.051 f3 1.75 0.069 g 10.80 11.10 0.425 0.437 h 14.70 15.20 0.578 0.598 l 12.20 0.480 l2 16.20 0.638 l3 18.0 0.709 l5 3.95 4.15 0.156 0.163 l6 31.00 1.220 o 4.00 4.10 0.157 0.161 BYT60P-1000 / byt261piv-1000 7/7
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